Schottky barrier and ageing effect studies in Au(Cu)/p‐CdTe contacts
Author:
Affiliation:
1. Institute of Semiconductor Physics of NAS of Ukraine, 45, pr. Nauki, 03028 Kyiv, Ukraine
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303981
Reference14 articles.
1. Recent developments and progress on electrical contacts to CdTe, CdS and ZnSe with special reference to BARRIER contacts to CdTe
2. Aging effects and Auger depth profiling studies of Sb/n-CdTe contacts
3. Electrical properties and contact metallurgy of elemental (Cu, Ag, Au, Ni) and compound contacts on p-Cd0.95Zn0.05Te
4. Interfacial chemistry of metals on CdTe and ZnTe (110)
5. Measurement of barrier height on etched p-type cadmium telluride
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1. Atomic and electronic structure of CdTe/metal (Cu, Al, Pt) interfaces and their influence to the Schottky barrier;Journal of Applied Physics;2016-11-14
2. The effect of fast annealing treatment on the interface structure and electrical properties of Au/Hg3In2Te6 contact;Journal of Materials Science;2014-06-19
3. References;Chalcogenide Photovoltaics;2011-02-25
4. The study on the work function of CdZnTe with different surface states by synchrotron radiation photoemission spectroscopy;Journal of Applied Physics;2009-09
5. The Interface Reaction and Schottky Barrier Between Metals and CdZnTe;The Journal of Physical Chemistry C;2007-08-01
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