Photoluminescence study of MBE grown InGaN with intentional indium segregation-Reference-Cited by-同舟云学术

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Photoluminescence study of MBE grown InGaN with intentional indium segregation

Published:2005-04-11 Issue:7 Volume:2 Page:2779-2782
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Cheung Maurice C.¹,Namkoong Gon²,Chen Fei¹,Furis Madalina¹,Pudavar Haridas E.³,Cartwright Alexander N.¹,Doolittle W. Alan²

Affiliation:

1. Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260, USA

2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA

3. Department of Chemistry, University at Buffalo, State University of New York, Buffalo, NY 14260, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461498

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual-Color Emission in Hybrid III–Nitride/ZnO Light Emitting Diodes;Applied Physics Express;2010-02-12

2. Optical investigations of Berthelot-type properties in quaternary AlInGaN multiple quantum well heterosystems;Journal of Crystal Growth;2009-06

3. Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots;SPIE Proceedings;2008-02-07

4. Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn–Se–Te superlattice structures;Applied Physics Letters;2008-01-21

5. Synthesis and optical properties of In-doped GaN nanocrystals;Solid State Communications;2007-02

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