Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift-Reference-Cited by-同舟云学术

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Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Published:2009-01-14 Issue:S2 Volume:6 Page:S826-S829
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Queren Désirée,Avramescu Adrian,Schillgalies Marc,Peter Matthias,Meyer Tobias,Brüderl Georg,Lutgen Stephan,Strauß Uwe

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth;Applied Surface Science;2021-05

2. Design and growth of GaN-based blue and green laser diodes;Science China Materials;2020-03-18

3. High-power hybrid GaN-based green laser diodes with ITO cladding layer;Photonics Research;2020-02-12

4. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer;Optics & Laser Technology;2019-04

5. GaN-Based Blue and Green Laser Diodes;Handbook of Solid-State Lighting and LEDs;2017-06-07

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