The value of the direct bandgap of InN: a re‐examination-Reference-Cited by-同舟云学术

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The value of the direct bandgap of InN: a re‐examination

Published:2004-04 Issue:6 Volume:1 Page:1425-1428
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Briot O.,Maleyre B.¹,Clur‐Ruffenach S.¹,Gil B.¹,Pinquier C.²,Demangeot F.²,Frandon J.²

Affiliation:

1. Groupe d'Etudes des Semiconducteurs, UMR 5650 CNRS, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier, France

2. Laboratoire de Physique des Solides IRSAMC, UMR 5477 CNRS, 118 Route de Narbonne, Université Paul Sabatier, 31062 Toulouse Cédex 04, France

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304080

Reference29 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

3. Unusual properties of the fundamental band gap of InN

4. Small band gap bowing in In1−xGaxN alloys

5. Optical Properties of InxGa1?xN with Entire Alloy Composition on InN Buffer Layer Grown by RF-MBE

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017

2. The Photoluminescence Properties of Nanocomposite Thin Films Containing InN Quantum Dots Embedded in Si Matrix;ECS Journal of Solid State Science and Technology;2014

3. Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy;Journal of Materials Research;2011-03-11

4. Growth of InN Nanocrystalline Films by Activated Reactive Evaporation;Journal of Nanoscience and Nanotechnology;2009-09-01

5. Self-Assembled Growth of InN Microcages and Nanowires by Ammonolysis of an Amorphous Precursor and Their Optical Properties;The Journal of Physical Chemistry C;2009-05-27

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