Enhancing the electrical and thermal stability of organic thin-film transistors by utilizing fluorinated polyimide and silicon dioxide bilayer gate dielectric-Reference-Cited by-同舟云学术

Enhancing the electrical and thermal stability of organic thin-film transistors by utilizing fluorinated polyimide and silicon dioxide bilayer gate dielectric

Published:2018-09-09 Issue:5 Volume:136 Page:47013
ISSN:0021-8995
Container-title:Journal of Applied Polymer Science
language:en
Short-container-title:J. Appl. Polym. Sci.

Author:

Wei Xiaoyun¹,Cao Jupeng¹,Li Aiyuan¹,He Chao¹,Liu Ming¹,Meng Hong¹^ORCID

Affiliation:

1. School of Advanced Materials; Peking University Shenzhen Graduate School, Peking University; Shenzhen, 518055 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Guangdong Provincial Science Technology Project

Guangdong Key Research Project

Shenzhen Engineering Laboratory

Shenzhen-Hongkong Collabration Project

Shenzhen Graduate School, Peking University

Shenzhen Science and Technology research grant

Publisher

Wiley

Subject

Materials Chemistry,Polymers and Plastics,Surfaces, Coatings and Films,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/app.47013/fullpdf

Reference40 articles.

1. High-Performance Plastic Transistors Fabricated by Printing Techniques

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4. Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

5. Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

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