Numerical modeling and investigation of liquid phase epitaxy of Hg1-xCdxTe infrared detectors-Reference-Cited by-同舟云学术

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Numerical modeling and investigation of liquid phase epitaxy of Hg1-xCdxTe infrared detectors

Published:2005-09 Issue:9 Volume:40 Page:832-838
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Lin K.,Dold P.,Figgemeier H.,Benz K. W.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference13 articles.

1. (Ed.), Properties of Narrow Gap Cadmium-based Compounds, INSPEC, London (1994).

2. Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxy

3. FIDAP 8.5. Fluent Inc. NH, USA (1999).

4. Global modelling of heat transfer in crystal growth furnaces

5. Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equipment and Instrumentation for Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

2. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

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