Impact of electrical resistance and TEP in layered SnSe crystals under high pressure-Reference-Cited by-同舟云学术

Impact of electrical resistance and TEP in layered SnSe crystals under high pressure

Published:2005-08 Issue:8 Volume:40 Page:789-790
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Agarwal A.,Trivedi P. H.,Lakshminarayana D.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference4 articles.

1. Ellipsometric studies of the dielectric function of SnSe and a simple model of the electronic structure and the bonds of the orthorhombic IV-VI compounds

2. Single crystal growth of layered tin monoselenide semiconductor using a direct vapour transport technique

3. and in “Pressure induced phase transition in IV-VI compounds, Vol. 22 of Material Research Society Proceedings”, edited by A. Homan, R. K. MacCrone and E. Whalley (North Holland, New York, 1983) p. 93.

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