Electrical properties of nitrogen implanted GaSe single crystal-Reference-Cited by-同舟云学术

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Electrical properties of nitrogen implanted GaSe single crystal

Published:2003-09 Issue:9 Volume:38 Page:811-916
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Karabulut O.,Parlak M.,Turan R.,Serincan U.,Tasarkuyu E.,Akįnoglu B. G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Temperature and Illumination on the Current–Voltage Characteristics of a Al/p-GaSe/In Diode;Journal of Electronic Materials;2020-07-22

2. Current-transport mechanisms in the Au/GaSe:Nd Schottky contact;Journal of Materials Science: Materials in Electronics;2020-02-19

3. Anisotropy of the Exciton Processes in GaSe Crystals with Low S and Te Concentrations;Journal of Nanoelectronics and Optoelectronics;2009-04-01

4. Photoluminescence spectra of nitrogen implanted GaSe crystals;Journal of Luminescence;2008-10

5. Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique;Crystal Research and Technology;2006-12

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