Stress-induced structural changes in thin InAs layers grown on GaAs substrate-Reference-Cited by-同舟云学术

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Stress-induced structural changes in thin InAs layers grown on GaAs substrate

Published:2003-04 Issue:35 Volume:38 Page:302-306
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:
Short-container-title:Cryst. Res. Technol.

Author:

Bak-Misiuk J.,Shalimov A.,Kaniewski J.,Misiuk A.,Dynowska E.,Reginski K.,Trela J.,Przesławski T.,Hartwig J.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variation of strain in granular GaAs:MnAs layers;Crystallography Reports;2013-12

2. Effect of Stress on Structural Transformations in GaMnAs;Journal of Nanoscience and Nanotechnology;2012-11-01

3. Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison;Physica E: Low-dimensional Systems and Nanostructures;2009-10

4. High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer;Journal of Crystal Growth;2004-07

5. Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE;Superlattices and Microstructures;2004-01

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