Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressure
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Published:2003-04
Issue:35
Volume:38
Page:336-343
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ISSN:0232-1300
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Container-title:Crystal Research and Technology
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language:
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Short-container-title:Cryst. Res. Technol.
Author:
Kaniewska M.,Misiuk A.
Subject
Condensed Matter Physics,General Materials Science,General Chemistry