Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature-Reference-Cited by-同舟云学术

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Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature

Published:2007-11 Issue:11 Volume:42 Page:1132-1136
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Okutan M.,Azak F.,Şahin P.,Çavdarlı M.,Erdem Z.,Şentürk E.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.200710964/fullpdf

Reference23 articles.

1. Impedance spectroscopy studies on Fe3+ ion modified PLZT ceramics

2. Thermal history and dielectric behavior in the incommensurate phase of TlGaSe2

3. The aging effect within incommensurate phase in TlGaSe2

4. The optical investigation of TlGa0.999Pr0.001Se2 and TlGaSe2 single crystals

5. , , , and , phys. stat. sol. (a) K115 (1976).

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1. Interfacial layer in heterojunction;Solid State Communications;2009-12

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