ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?-Reference-Cited by-同舟云学术

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ToF-SIMS depth profiling of insulating samples, interlaced mode or non-interlaced mode?

Published:2014-02-24 Issue:S1 Volume:46 Page:257-260
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Wang Zhaoying¹²,Jin Ke³,Zhang Yanwen⁴³,Wang Fuyi¹,Zhu Zihua²

Affiliation:

1. Institute of Chemistry; Chinese Academy of Sciences; Beijing 100190 China

2. W. R. Wiley Environmental Molecular Science Laboratory; Pacific Northwest National Laboratory; Richland WA 99354 USA

3. Department of Materials Science & Engineering; University of Tennessee; Knoxville TN 37996 USA

4. Materials Science & Technology Division; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

Funder

NSFC

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Solid state diffusion during nuclear glass residual alteration in solution

2. Degradation of Glass Artifacts: Application of Modern Surface Analytical Techniques

3. An investigation of hydrogen depth profiling using ToF-SIMS

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1. ToF-SIMS in material research: A view from nanoscale hydrogen detection;Materials Today;2024-06

2. Significant decrease in surface charging of electrically isolated ionic liquid by cluster ion bombardment;Journal of Vacuum Science & Technology A;2024-04-19

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4. Behavior and process of background signal formation of hydrogen, carbon, nitrogen, and oxygen in silicon wafers during depth profiling using dual‐beam TOF‐SIMS;Surface and Interface Analysis;2021-11-16

5. Addition of Monovalent Silver Cations to CH3NH3PbBr3 Produces Crystallographically Oriented Perovskite Thin Films;ACS Applied Energy Materials;2019-07-12

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