1. ANSI/ESD ESD-STM 5.3.1 - 1999 ESD Association Standard Test Method for the Protection of Electrostatic Discharge Sensitive Items - Electrostatic Discharge Sensitivity Testing - Charged Device Model (CDM) Testing - Component Level 1999
2. JEDEC. JESD22-C101-A A Field-Induced Charged Device Model Test Method for Electrostatic Discharge-Withstand Thresholds of Microelectronic Components 2000
3. T. Speakman A model for the failure of bipolar silicon integrated circuits subjected to electrostatic discharge Proceedings of the International Reliability Physics Symposium 1974 60 67
4. P.R. Bossard R.G. Chemelli B.A. Unger ESD damage from triboelectrically charged IC-pins Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium 1980 17 22
5. R.D. Enoch R.N. Shaw An experimental validation of the field-induced ESD model Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium 1986 224 231