1. Malik A “Near-infrared photodetectors based on HglnTe-semiconductor compound” in Proceeding of SPIE Conference on Photodiode: Marerials and Devices IV, California, 3629 (1999), 433-442
2. The electrical properties of Hg3In2Te6 compound;Grushka;Ukrainian Physics Journal,1985
3. Radiation tolerance effect in semiconductors with the stoichiometric vacancy;Galchinetskyi;Soviet Solid State of Pysics,1972
4. The perspective material for thermoresistors-Hg3In2Te6;Bakumenko;Electronnaya Technika: Materialy,1983
5. Wang Yiyi Influence of surface treatment on the contact poperties between Hg 3 In 2 Te 6 wafer and mental electrode, Master's thesis of Northwestern Polytechnical University, 2012