Recent Advances in Power Semiconductor Technology

Author:

Rąbkowski Jacek,Peftitsis Dimosthenis,Nee Hans-Peter

Publisher

John Wiley & Sons, Ltd

Reference72 articles.

1. SiC power transistors - a new era in power electronics is initiated;Rabkowski;IEEE Industrial Electronics Magazine,2012

2. The silicon insulated-gate field-effect transistor;Hofstein;Proceedings of the IEEE,1963

3. Deboy , G. März , M. Stengl , J.P. et al 1998 Procedings of International Electron Devices Meeting 1998 (IEDM 1998) 683 685

4. Becke , H.W. Wheatley , C.F. Jr 1980

5. The insulated gate rectifier (IGR): a new power switching device;Baliga;IEEE Electron Device Letters,1983

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