Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption-Reference-Cited by-同舟云学术

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Published:2019-11-04 Issue:1 Volume:30 Page:1906131
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Ren Chuanlai¹²,Zhong Gaokuo²,Xiao Qun¹²,Tan Congbing³,Feng Ming⁴,Zhong Xiangli¹,An Feng¹²,Wang Jinbin¹,Zi Mengfei¹²,Tang Mingkai¹²,Tang Yong¹,Jia Tingting²,Li Jiangyu²^ORCID

Affiliation:

1. School of Materials Science and EngineeringXiangtan University Xiangtan 411105 China

2. Shenzhen Key Laboratory of NanobiomechanicsShenzhen Institutes of Advanced TechnologyChinese Academy of Sciences Shenzhen 518055 China

3. Department of Physics and Electronic ScienceHunan University of Science and Technology Xiangtan 411105 China

4. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of EducationJilin Normal University Changchun 130103 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Shenzhen Institutes of Advanced Technology Innovation Program for Excellent Young Researchers

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201906131

Reference56 articles.

1. Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare

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3. Wearable smart sensor systems integrated on soft contact lenses for wireless ocular diagnostics

4. Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex

5. Flexible and biocompatible high-performance solid-state micro-battery for implantable orthodontic system

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