Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption-Reference-Cited by-同舟云学术

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Published:2019-11-04 Issue:1 Volume:30 Page:1906131
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Ren Chuanlai¹²,Zhong Gaokuo²,Xiao Qun¹²,Tan Congbing³,Feng Ming⁴,Zhong Xiangli¹,An Feng¹²,Wang Jinbin¹,Zi Mengfei¹²,Tang Mingkai¹²,Tang Yong¹,Jia Tingting²,Li Jiangyu²^ORCID

Affiliation:

1. School of Materials Science and EngineeringXiangtan University Xiangtan 411105 China

2. Shenzhen Key Laboratory of NanobiomechanicsShenzhen Institutes of Advanced TechnologyChinese Academy of Sciences Shenzhen 518055 China

3. Department of Physics and Electronic ScienceHunan University of Science and Technology Xiangtan 411105 China

4. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of EducationJilin Normal University Changchun 130103 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Shenzhen Institutes of Advanced Technology Innovation Program for Excellent Young Researchers

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201906131

Reference56 articles.

1. Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare

2. Ultrathin Quantum Dot Display Integrated with Wearable Electronics

3. Wearable smart sensor systems integrated on soft contact lenses for wireless ocular diagnostics

4. Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex

5. Flexible and biocompatible high-performance solid-state micro-battery for implantable orthodontic system

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study of phase transition in the α-In₂Se₃/metal heterostructures;Journal of Physics: Condensed Matter;2024-01-04

2. Self-Recovery of a Buckling BaTiO₃ Ferroelectric Membrane;ACS Applied Materials & Interfaces;2023-11-22

3. Perspectives on MXene-PZT based ferroelectric memristor in computation in memory applications;Applied Physics Letters;2023-08-07

4. Polarized Tunneling Transistor for Ultrafast Memory;ACS Nano;2023-06-20

5. Molybdenum Telluride Based Flexible Ambipolar Transistor on Polyimide;2023 6th International Conference on Electronics Technology (ICET);2023-05-12