Non-Lithographic Fabrication of All-2D α-MoTe2Dual Gate Transistors-Reference-Cited by-同舟云学术

Non-Lithographic Fabrication of All-2D α-MoTe2Dual Gate Transistors

Published:2016-03-16 Issue:18 Volume:26 Page:3146-3153
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Choi Kyunghee¹,Lee Young Tack²,Kim Jin Sung¹,Min Sung-Wook¹,Cho Youngsuk¹,Pezeshki Atiye¹,Hwang Do Kyung²,Im Seongil¹

Affiliation:

1. Institute of Physics and Applied Physics; Yonsei University; 50, Yonsei-ro Seodaemun-gu Seoul 120-749 Korea

2. Center for Opto-Electronic Materials and Devices Post-Silicon Semiconductor Institute; Korea Institute of Science and Technology (KIST); 5, Hwarang-ro 14-gil Seongbuk-gu Seoul 136-791 Korea

Funder

Ministry of Science, ICT and Future Planning

Yonsei University

KIST Institution Program

Brain Korea 21 plus Program

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference38 articles.

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2. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

3. Two-dimensional flexible nanoelectronics

4. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

5. Graphene: Status and Prospects

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