Carrier Modulation of Ambipolar Few-Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping-Reference-Cited by-同舟云学术

Carrier Modulation of Ambipolar Few-Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

Author:

Luo Wei¹,Zhu Mengjian²,Peng Gang¹,Zheng Xiaoming¹,Miao Feng³,Bai Shuxin²,Zhang Xue-Ao¹⁴,Qin Shiqiao¹⁴

Affiliation:

1. College of Science; National University of Defense Technology; Changsha 410073 P. R. China

2. College of Aerospace Science and Engineering; National University of Defense Technology; Changsha 410073 P. R. China

3. National Laboratory of Solid State Microstructures; School of Physics; Nanjing University; Nanjing 210093 P. R. China

4. State Key Laboratory of High Performance Computing; National University of Defense Technology; Changsha 410073 P. R. China

Funder

National Natural Science Foundation of China

Open Foundation of State Key Laboratory of High Performance Computing

National University of Defense Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference49 articles.

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