Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage-Reference-Cited by-同舟云学术

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Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

Published:2015-03-30 Issue:19 Volume:25 Page:2876-2883
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kwon Jonghan¹,Sharma Abhishek A.²,Bain James A.²,Picard Yoosuf N.¹,Skowronski Marek¹

Affiliation:

1. Materials Science and Engineering Department; Carnegie Mellon University; 5000 Forbes Ave. Pittsburgh PA 15213 USA

2. Electrical and Computer Engineering Department; Carnegie Mellon University; 5000 Forbes Ave. Pittsburgh PA 15213 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201500444/fullpdf

Reference50 articles.

1. Metal–Oxide RRAM

2. Emerging memories: resistive switching mechanisms and current status

3. Memristive devices for computing

4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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