Large-Size Growth of Ultrathin SnS2Nanosheets and High Performance for Phototransistors-Reference-Cited by-同舟云学术

Large-Size Growth of Ultrathin SnS2Nanosheets and High Performance for Phototransistors

Published:2016-04-13 Issue:24 Volume:26 Page:4405-4413
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhou Xing¹,Zhang Qi¹,Gan Lin¹,Li Huiqiao¹,Zhai Tianyou¹

Affiliation:

1. State Key Laboratory of Material Processing and Die & Mould Technology; School of Materials Science and Engineering; Huazhong University of Science and Technology (HUST); Wuhan 430074 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Program for New Century Excellent Talents in University

Program for HUST Interdisciplinary Innovation Team

Fundamental Research Funds for the Central University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference64 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Metal dichalcogenide nanosheets: preparation, properties and applications

4. Photocurrent generation with two-dimensional van der Waals semiconductors

5. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline

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