Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films-Reference-Cited by-同舟云学术

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Published:2017-03-10 Issue:15 Volume:27 Page:1605196
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

McGilly Leo J.¹,Sandu Cosmin S.¹²,Feigl Ludwig¹³,Damjanovic Dragan¹,Setter Nava¹

Affiliation:

1. Ceramics Laboratory; EPFL - Swiss Federal Institute of Technology; Lausanne CH-1015 Switzerland

2. 3D-OXIDES; 130 Rue Gustave Eiffel Saint Genis Pouilly 01630 France

3. Institute for Photon Science and Synchrotron Radiation; KIT - Karlsruhe Institute of Technology; Hermann-von-Helmholtz-Platz 1 D-76344 Eggenstein-Leopoldshafen Germany

Funder

European Research Council

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Swiss Federal Office of Education and Science

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors

2. Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

3. Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

4. Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb)(ZrxTi1−x)O3/Pt capacitors

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