Van der Waals p-n Junction Based on an Organic-Inorganic Heterostructure-Reference-Cited by-同舟云学术

Van der Waals p-n Junction Based on an Organic-Inorganic Heterostructure

Published:2015-08-18 Issue:36 Volume:25 Page:5865-5871
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Liu Fucai¹,Chow Wai Leong²³,He Xuexia¹,Hu Peng¹,Zheng Shoujun⁴,Wang Xingli²,Zhou Jiadong¹,Fu Qundong¹,Fu Wei¹,Yu Peng¹,Zeng Qingsheng¹,Fan Hong Jin⁴,Tay Beng Kang²³,Kloc Christian¹,Liu Zheng¹³

Affiliation:

1. School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore

2. NOVITAS, Nanoelectronics Centre of Excellent; School of Electrical and Electronic Engineering; Nanyang Technological University; Singapore 639798 Singapore

3. CINTRA CNRS/NTU/THALES; UMI 3288, Research Techno Plaza; 50 Nanyang Drive, Border X Block, Level 6 Singapore 637553 Singapore

4. Centre for Disruptive Photonic Technologies; School of Physics and Mathematics Sciences; Nanyang Technological University; Singapore 637371 Singapore

Funder

Nanyang Technological University

NTU-A*STAR Silicon Technologies Centre of Excellence

Singapore Ministry of Education Academic Research Fund Tier 1

MOE Tier 3

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres