Fast Photoresponse from 1T Tin Diselenide Atomic Layers-Reference-Cited by-同舟云学术

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Published:2015-11-19 Issue:1 Volume:26 Page:137-145
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yu Peng¹,Yu Xuechao²,Lu Wanglin³,Lin Hsin⁴,Sun Linfeng⁵,Du Kezhao¹,Liu Fucai¹,Fu Wei¹,Zeng Qingsheng¹,Shen Zexiang⁵,Jin Chuanhong³,Wang Qi Jie²,Liu Zheng¹

Affiliation:

1. School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

2. School of Electrical and Electronic Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

3. State Key Laboratory of Silicon Materials; School of Materials Science & Engineering; Zhejiang University; Hangzhou Zhejiang 310027 P. R. China

4. Department of Physics; National University of Singapore; Singapore 117542 Singapore

5. School of Physical and Mathematical Sciences; Nanyang Technological University; Singapore 639798 Singapore

Funder

National Basic Research Program of China

National Science Foundation of China

Program for Innovative Research Team in University of Ministry of Education of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference57 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Valley filter and valley valve in graphene

5. Boron Nitride Nanomesh

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