Analog Circuit Applications Based on All‐2D Ambipolar ReSe 2 Field‐Effect Transistors-Reference-Cited by-同舟云学术

Analog Circuit Applications Based on All‐2D Ambipolar ReSe 2 Field‐Effect Transistors

Published:2019-04-02 Issue:22 Volume:29 Page:1809011
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Ko‐Chun¹,Yang Shih‐Hsien¹,Sung Yung‐Shang²,Chang Yuan‐Ming²,Lin Che‐Yi³^ORCID,Yang Feng‐Shou¹,Li Mengjiao⁴,Watanabe Kenji⁵,Taniguchi Takashi⁵,Ho Ching‐Hwa⁶,Lien Chen‐Hsin¹,Lin Yen‐Fu²⁷

Affiliation:

1. Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan

2. Department of Physics National Chung Hsing University Taichung 40227 Taiwan

3. Department of Electrophysics National Chiao Tung University Hsinchu 300 Taiwan

4. Key Laboratory of Polar Materials and Devices Ministry of Education Department of Electronic Engineering East China Normal University Shanghai 200241 China

5. National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba 305‐0044 Japan

6. Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan

7. Institute of Nanoscience National Chung Hsing University Taichung 40227 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Science and Technology Agency

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201809011

Reference63 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene Transistors: Status, Prospects, and Problems

3. Current saturation in zero-bandgap, top-gated graphene field-effect transistors

4. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

5. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

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