MXene Electrode for the Integration of WSe2and MoS2Field Effect Transistors-Reference-Cited by-同舟云学术

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MXene Electrode for the Integration of WSe2and MoS2Field Effect Transistors

Published:2016-05-23 Issue:29 Volume:26 Page:5328-5334
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Xu Jiao¹,Shim Jaewoo²,Park Jin-Hong²,Lee Sungjoo¹²³

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT); Suwon 440-746 Korea

2. School of Electronic and Electrical Engineering; Sungkyunkwan University (SKKU); Suwon 440-746 Korea

3. Center for Human Interface Nanotechnology (HINT); Sungkyunkwan University (SKKU); Suwon 440-746 Korea

Funder

Ministry of Science ICT and Future Planning

Korean government (MSIP)

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Boron nitride substrates for high-quality graphene electronics

3. Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

4. Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

5. Two-Dimensional Transition Metal Dichalcogenides in Biosystems

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