Tunable Volatility of Ge2 Sb2 Te5 in Integrated Photonics-Reference-Cited by-同舟云学术

Tunable Volatility of Ge2 Sb2 Te5 in Integrated Photonics

Published:2019-01-25 Issue:11 Volume:29 Page:1807571
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Youngblood Nathan¹^ORCID,Ríos Carlos¹,Gemo Emanuele²,Feldmann Johannes³,Cheng Zengguang¹,Baldycheva Anna²,Pernice Wolfram HP³,Wright C. David²,Bhaskaran Harish¹

Affiliation:

1. Department of Materials; University of Oxford; Parks Road Oxford OX1 3PH UK

2. Department of Engineering; University of Exeter; Exeter EX4 4QF UK

3. Institute of Physics; University of Muenster; CeNTech II, Heisenbergstr. 11 D-48149 Muenster Germany

Funder

Engineering and Physical Sciences Research Council

Deutsche Forschungsgemeinschaft

European Research Council

European Union's Horizon 2020 research and innovation programme

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201807571/fullpdf

Reference41 articles.

1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

2. Phase-change materials for rewriteable data storage

3. An optoelectronic framework enabled by low-dimensional phase-change films

4. Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays

5. 38-4: Solid-State Reflective Displays (SRD ®) Utilizing Ultrathin Phase-Change Materials

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