High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes-Reference-Cited by-同舟云学术

High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes

Published:2015-11-20 Issue:1 Volume:26 Page:91-100
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Alsaif Manal M. Y. A.¹,Chrimes Adam F.¹,Daeneke Torben¹,Balendhran Sivacarendran²,Bellisario Darin O.³,Son Youngwoo³,Field Matthew R.⁴,Zhang Wei¹,Nili Hussein²,Nguyen Emily P.¹,Latham Kay⁵,van Embden Joel⁵⁶,Strano Michael S.³,Ou Jian Zhen¹,Kalantar-zadeh Kourosh¹

Affiliation:

1. School of Electrical and Computer Engineering; RMIT University; Melbourne Victoria 3001 Australia

2. Functional Materials and Microsystems Research Group; RMIT University; Melbourne Victoria 3001 Australia

3. Department of Chemical Engineering; Massachusetts Institute of Technology; Cambridge MA 02139 USA

4. RMIT Microscopy and Microanalysis Facility; RMIT University; Melbourne Victoria 3001 Australia

5. School of Applied Sciences; RMIT University; Melbourne Victoria 3001 Australia

6. CSIRO Manufacturing Flagship; Bayview Avenue; Clayton Victoria 3168 Australia

Funder

Australian Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Electronics based on two-dimensional materials

2. Two-dimensional flexible nanoelectronics

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Two-Dimensional Molybdenum Trioxide and Dichalcogenides

5. Black phosphorus field-effect transistors

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