Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

Published:2011-08-11 Issue:20 Volume:21 Page:3828-3835
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

De Suman,Layek Arunasish,Raja Archana,Kadir Abdul,Gokhale Mahesh R.,Bhattacharya Arnab,Dhar Subhabrata,Chowdhury Arindam

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201100894/fullpdf

Reference46 articles.

1. The Blue Laser Diode

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

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