Dielectric Relaxation Processes, Electronic Structure, and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials-Reference-Cited by-同舟云学术

Dielectric Relaxation Processes, Electronic Structure, and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials

Published:2014-03-18 Issue:25 Volume:24 Page:3885-3896
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Sippel Pit¹,Denysenko Dmytro²,Loidl Alois¹,Lunkenheimer Peter¹,Sastre German³,Volkmer Dirk²

Affiliation:

1. Chair of Experimental Physics V Center for Electronic Correlations and Magnetism; University of Augsburg; Universitätsstr. 2 D-86135 Augsburg Germany

2. Chair of Solid State and Material Science; Institute of Physics, University of Augsburg; Universitätsstr. 1 D-86135 Augsburg Germany

3. Instituto de Tecnologia Quimica (UPV-CSIC); Universidad Politecnica de Valencia; Av. Los Naranjos s/n 46022 Valencia Spain

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201400083/fullpdf

Reference70 articles.

1. A Roadmap to Implementing Metal-Organic Frameworks in Electronic Devices: Challenges and Critical Directions

2. Metal–organic frameworks as semiconductors

3. Metal–organic frameworks as platforms for clean energy