Liquid‐Gated Transistors Based on Reduced Graphene Oxide for Flexible and Wearable Electronics-Reference-Cited by-同舟云学术

Liquid‐Gated Transistors Based on Reduced Graphene Oxide for Flexible and Wearable Electronics

Published:2019-09-15 Issue:46 Volume:29 Page:1905375
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Furlan de Oliveira Rafael¹,Livio Pietro Antonio¹,Montes‐García Verónica¹,Ippolito Stefano¹,Eredia Matilde¹,Fanjul‐Bolado Pablo²,González García María Begoña²,Casalini Stefano¹,Samorì Paolo¹^ORCID

Affiliation:

1. Université de Strasbourg CNRS ISIS UMR 7006, 8 allée Gaspard Monge F‐67000 Strasbourg France

2. Metrohm DropSens S.L. Ed.CEEI Parque Tecnológico de Asturias 33428 Llanera Asturias Spain

Funder

European Commission

Agence Nationale de la Recherche

National Institute of Education

Centre International de Recherche aux Frontières de la Chimie

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905375

Reference62 articles.

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3. Honeycomb Carbon: A Review of Graphene

4. Graphene: An Emerging Electronic Material

5. Graphene Electronic Tattoo Sensors

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