A Facile Solution-Doping Method to Improve a Low-Temperature Zinc Oxide Precursor: Towards Low-Cost Electronics on Plastic Foil-Reference-Cited by-同舟云学术

A Facile Solution-Doping Method to Improve a Low-Temperature Zinc Oxide Precursor: Towards Low-Cost Electronics on Plastic Foil

Published:2014-01-06 Issue:17 Volume:24 Page:2537-2543
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Weber Dennis¹²,Botnaraş Silviu³²,Pham Duy Vu²,Merkulov Alexey²,Steiger Jürgen²,Schmechel Roland³,De Cola Luisa⁴

Affiliation:

1. Physikalisches Institut and Center for Nanotechnology; Heisenbergstr. 11 48149 Münster Germany

2. Coatings & Additives; Evonik Industries AG; Paul-Baumann-Str., 1 45764 Marl Germany

3. Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CeNIDE); University Duisburg-Essen; Carl-Benz-Str. 199 47057 Duisburg Germany

4. Institut de Science et d'Ingénierie Supramoléculaires (I.S.I.S.); Université de Strasbourg; 8 allée Gaspard Monge 67000 Strasbourg France

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Fundamentals of zinc oxide as a semiconductor

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