Mixed‐Valence‐Driven Quasi‐1D Sn II Sn IV S 3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse-Reference-Cited by-同舟云学术

Mixed‐Valence‐Driven Quasi‐1D Sn II Sn IV S 3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Published:2019-07-18 Issue:38 Volume:29 Page:1904416
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yang Huai¹,Pan Longfei¹,Wang Xiaoting¹,Deng Hui‐Xiong¹,Zhong Mianzeng¹,Zhou Ziqi¹,Lou Zheng¹,Shen Guozhen¹,Wei Zhongming¹²^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China

2. Beijing Academy of Quantum Information Sciences Beijing 100193 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201904416

Reference51 articles.

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3. Mixed valence: origins and developments

4. Large anisotropic thermal expansion and magnetostriction in the mixed-valence compound CeNi

5. Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

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