Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device-Reference-Cited by-同舟云学术

Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device

Published:2019-11-07 Issue:4 Volume:30 Page:1907119
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zheng Yichu¹,Fischer Axel²^ORCID,Sawatzki Michael²,Doan Duy Hai³,Liero Matthias³,Glitzky Annegret³,Reineke Sebastian²,Mannsfeld Stefan C. B.¹

Affiliation:

1. Center for Advancing Electronics Dresden (cfaed) and Dresden Integrated Center for Applied Physics and Photonic Materials and Institute for Applied PhysicsTechnische Universität Dresden Dresden 01187 Germany

2. Dresden Integrated Center for Applied Physics and Photonic Materials and Institute for Applied PhysicsTechnische Universität Dresden Dresden 01187 Germany

3. Weierstrass Institute Berlin Berlin 10117 Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201907119

Reference33 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

2. Programmable polymer thin film and non-volatile memory device