Charge Transfer within the F4 TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application-Reference-Cited by-同舟云学术

Charge Transfer within the F4 TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application

Published:2018-10-25 Issue:51 Volume:28 Page:1806244
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Jiawei¹²,Ji Zhuoyu¹²,Yang Guanhua¹²,Chuai Xichen¹²,Liu Fengjing³,Zhou Zheng¹²,Lu Congyan¹²,Wei Wei¹²,Shi Xuewen¹²,Niu Jiebin¹²,Wang Liang³,Wang Hong⁴,Chen Jiezhi⁵,Lu Nianduan¹²,Jiang Chao³,Li Ling¹²,Liu Ming¹²

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology; Institute of Microelectronics of Chinese Academy of Sciences; Beijing 100029 China

2. University of Chinese Academy of Sciences; Beijing 100049 China

3. CAS Key Laboratory of Standardization and Measurement for Nanotechnology; CAS Center for Excellence in Nanoscience National Centre for Nanoscience and Technology; No. 11 Beiyitiao Zhongguancun Beijing 100190 China

4. Key Laboratory of Wide Band Gap Semiconductor Technology; School of Advanced Materials and Nanotechnology; Xidian University; Xi'an 710071 China

5. School of Information Science and Engineering; Shandong University; Shandong 250100 China

Funder

National Key Research and Development Program

China Key Research and Development Program

Beijing Training

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials