MoS 2 /HfO 2 /Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection-Reference-Cited by-同舟云学术

MoS 2 /HfO 2 /Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Published:2019-09-09 Issue:46 Volume:29 Page:1906242
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Deng Jianan¹,Zong Lingyi²,Zhu Mingsai¹,Liao Fuyou²,Xie Yuying¹,Guo Zhongxun²,Liu Jian¹,Lu Bingrui¹,Wang Jianlu³,Hu Weida³,Zhou Peng²,Bao Wenzhong²^ORCID,Wan Jing¹

Affiliation:

1. State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China

2. State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

3. Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Funder

Shanghai Rising-Star Program

National Basic Research Program of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201906242

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