Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb 2 Te 3 Alloys between Ge 3 Sb 2 Te 6 and GeTe-Reference-Cited by-同舟云学术

Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb 2 Te 3 Alloys between Ge 3 Sb 2 Te 6 and GeTe

Published:2015-05-21 Issue:40 Volume:25 Page:6399-6406
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Jost Peter¹,Volker Hanno¹,Poitz Annika¹,Poltorak Christian¹,Zalden Peter¹,Schäfer Tobias¹,Lange Felix R. L.¹,Schmidt Rüdiger M.¹,Holländer Bernd²³,Wirtssohn Matti R.¹,Wuttig Matthias¹³

Affiliation:

1. I. Institute of Physics (IA) RWTH Aachen University Sommerfeldstr. 14 52074 Aachen Germany

2. Peter Grünberg Institut (PGI‐9) Forschungszentrum Jülich GmbH 52425 Jülich Germany

3. JARA‐Fundamentals of Future Information Technologies

Funder

European Union Seventh Framework Programme

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201500848

Reference35 articles.

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4. Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film

5. Structural and electrical properties of Ge1Sb2Te4 face centered cubic phase

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