Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors-Reference-Cited by-同舟云学术

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Author:

Qi Tailei¹,Gong Youpin¹²³^ORCID,Li Alei¹,Ma Xiaoming¹⁴,Wang Peipei¹,Huang Rui¹,Liu Chang¹⁵,Sakidja Ridwan⁶,Wu Judy Z.⁷,Chen Rui³,Zhang Liyuan¹

Affiliation:

1. Department of Physics Southern University of Science and Technology Shenzhen 518055 China

2. Academy for Advanced Interdisciplinary Studies Southern University of Science and Technology Shenzhen 518055 China

3. Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China

4. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics Chinese Academy of Sciences Beijing 100190 China

5. Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China

6. Department of Physics, Astronomy and Materials Science Missouri State University Springfield MO 65897 USA

7. Department of Physics and Astronomy University of Kansas Lawrence KS 66045 USA

Funder

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

National Science Foundation

Army Research Office

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

Reference56 articles.

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