The Enabling Electronic Motif for Topological Insulation in ABO 3 Perovskites-Reference-Cited by-同舟云学术

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The Enabling Electronic Motif for Topological Insulation in ABO 3 Perovskites

Published:2017-08-07 Issue:37 Volume:27 Page:1701266
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Xiuwen¹²,Abdalla Leonardo B.¹,Liu Qihang¹,Zunger Alex¹

Affiliation:

1. Renewable and Sustainable Energy Institute University of Colorado Boulder CO 80309 USA

2. College of Electronic Science and Technology Shenzhen University Shenzhen Guangdong 518060 P. R. China

Funder

Basic Energy Sciences

National Science Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201701266

Reference49 articles.

1. Z2Topological Order and the Quantum Spin Hall Effect

2. Time reversal polarization and aZ2adiabatic spin pump

3. Colloquium: Topological insulators

4. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

5. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

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