AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity-Reference-Cited by-同舟云学术

AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity

Published:2019-01-30 Issue:12 Volume:29 Page:1900314
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wu Feng¹,Xia Hui¹,Sun Haiding²,Zhang Junwei³,Gong Fan¹,Wang Zhen¹,Chen Long⁴,Wang Peng¹⁵,Long Mingsheng¹⁵,Wu Xing⁶,Wang Jianlu¹⁵,Ren Wencai⁴,Chen Xiaoshuang¹,Lu Wei¹,Hu Weida¹⁵^ORCID

Affiliation:

1. State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences Shanghai 200083 China

2. School of MicroelectronicsUniversity of Science and Technology of China Hefei 230026 China

3. Key Laboratory of Magnetism and Magnetic Materials of the Ministry of EducationSchool of Physical Science and Technology and Electron Microscopy Centre of Lanzhou UniversityLanzhou University Lanzhou 730000 China

4. Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences Shenyang 110016 China

5. University of Chinese Academy of SciencesChinese Academy of Sciences Beijing 100049 China

6. Shanghai Key Laboratory of Multidimensional Information ProcessingDepartment of Electronic EngineeringEast China Normal University Shanghai 200241 China

Funder

National Natural Science Foundation of China

Postdoctoral Research Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201900314

Reference58 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Single-layer MoS2 transistors