Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics-Reference-Cited by-同舟云学术

Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics

Published:2016-03-21 Issue:16 Volume:26 Page:2640-2647
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Glavin Nicholas R.¹²,Muratore Christopher³,Jespersen Michael L.¹⁴,Hu Jianjun¹⁴,Hagerty Phillip T.¹⁴,Hilton Al M.¹⁵,Blake Austin T.¹,Grabowski Christopher A.¹⁶,Durstock Michael F.¹,McConney Michael E.¹,Hilgefort Drew M.¹⁴,Fisher Timothy S.²,Voevodin Andrey A.⁷

Affiliation:

1. Materials and Manufacturing Directorate; Air Force Research Laboratory; Wright-Patterson AFB; OH 45433 USA

2. School of Mechanical Engineering and Birck Nanotechnology Center; Purdue University; West Lafayette IN 47907 USA

3. University of Dayton; Dayton OH 45409 USA

4. University of Dayton Research Laboratory; Dayton OH 45409 USA

5. Wyle Laboratories; Dayton OH 43433 USA

6. UES Inc.; Dayton OH 45432 USA

7. Materials Science and Engineering; University of North Texas; Denton TX 76203 USA

Funder

Air Force Office of Scientific Research Aerospace Materials for Extreme Environments

Complex Materials and Devices programs

US National Science Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Van der Waals heterostructures

2. Electronics based on two-dimensional materials

3. Large-Area 2-D Electronics: Materials, Technology, and Devices

4. Field-Effect Transistors Built from All Two-Dimensional Material Components

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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