Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures-Reference-Cited by-同舟云学术

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Author:

Kang Seok Ju¹,Lee Gwan-Hyoung²,Yu Young-Jun³⁴,Zhao Yue³,Kim Bumjung¹,Watanabe Kenji⁵,Taniguchi Takashi⁵,Hone James⁶,Kim Philip³,Nuckolls Colin¹

Affiliation:

1. Department of Chemistry; Columbia University; New York NY 10027 USA

2. Department of Materials Science and Engineering; Yonsei University; Seoul 120-749 Korea

3. Department of Physics; Columbia University; New York NY 10027 USA

4. Creative Research Center for Graphene Electronics; Electronics and Telecommunications Research Institute(ETRI); Daejeon 305-700 Korea

5. National Institute for Materials Science; 1-1 Namiki Tsukuba 305-0044 Japan

6. Department of Mechanical Engineering; Columbia University; New York NY 10027 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference48 articles.

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