Memory Devices: Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices (Adv. Funct. Mater. 25/2015)-Reference-Cited by-同舟云学术

Memory Devices: Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices (Adv. Funct. Mater. 25/2015)

Author:

Wang Hong¹²,Du Yuanmin³,Li Yingtao¹,Zhu Bowen¹,Leow Wan Ru¹,Li Yuangang⁴,Pan Jisheng⁵,Wu Tao³,Chen Xiaodong¹

Affiliation:

1. School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

2. School of Advanced Materials and Nanotechnology; Key Laboratory of Wide Band Gap; Semiconductor Technology; Xidian Univeristy; Xi'an 710071 China

3. Solar and Photovoltaics Engineering Research Center; King Abdullah University of Science and Technology; Thuwal 23955-6900 Kingdom of Saudi Arabia

4. School of Physical Science and Technology; Lanzhou University; Lanzhou 730000 China

5. Materials Centre of Innovation; Institute of Materials Research and Engineering; 3 Research Link Singapore 117602 Singapore

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

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