Toward the Optimized Spintronic Response of Sn‐Doped IrO 2 Thin Films-Reference-Cited by-同舟云学术

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Toward the Optimized Spintronic Response of Sn‐Doped IrO 2 Thin Films

Published:2019-03 Issue:10 Volume:29 Page:1806754
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Arias‐Egido Eduardo¹²^ORCID,Laguna‐Marco María Angeles¹²,Piquer Cristina¹²,Boada Roberto³⁴,Díaz‐Moreno Sofía⁴

Affiliation:

1. Instituto de Ciencia de Materiales de AragónCSIC – Universidad de Zaragoza Zaragoza 50009 Spain

2. Departamento de Física de la Materia CondensadaUniversidad de Zaragoza Zaragoza 50009 Spain

3. Department of ChemistryUniversitat Autònoma de Barcelona 08193 Bellaterra Barcelona Spain

4. Diamond Light Source LtdHarwell Science and Innovation Campus Didcot Oxfordshire OX11 0DE UK

Funder

Ministerio de Economía y Competitividad

Horizon 2020

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201806754

Reference29 articles.

1. Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices

2. Inverse spin-Hall effect in palladium at room temperature

3. Indication of intrinsic spin Hall effect in4dand5dtransition metals

4. 5d iridium oxide as a material for spin-current detection

5. Observation of the inverse spin Hall effect in silicon

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1. Regulating the Oxygen Vacancy of 3R-Phase Iridium Oxide by Loading Platinum Nanoparticles for Efficient Hydrogen Evolution;ACS Catalysis;2024-07-11

2. Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties;Journal of Physics: Condensed Matter;2024-04-10

3. Novel Ir1–xCoxO2 thin films: Growth and characterization;Journal of Alloys and Compounds;2023-12

4. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities;The Journal of Physical Chemistry Letters;2022-10-20

5. First principles evaluation of the OER properties of TM−X (TM = Cr, Mn, Fe, Mo, Ru, W and Os, and X = F and S) doped IrO2 (110) surface;Electrochimica Acta;2022-01

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