Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects-Reference-Cited by-同舟云学术

Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects

Published:2020-03 Issue:13 Volume:30 Page:1909983
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Huq Tahmida N.¹,Lee Lana C.¹,Eyre Lissa²³,Li Weiwei¹,Jagt Robert A.¹,Kim Chaewon⁴,Fearn Sarah⁵,Pecunia Vincenzo⁴,Deschler Felix³,MacManus‐Driscoll Judith L.¹,Hoye Robert L. Z.¹⁵^ORCID

Affiliation:

1. Department of Materials Science and MetallurgyUniversity of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK

2. Department of PhysicsUniversity of Cambridge JJ Thomson Ave Cambridge CB3 0HE UK

3. Walter Schottky InstituteDepartment of PhysicsTechnical University of Munich Am Coulombwall 4 85748 Garching Germany

4. Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow University 199 Ren'ai Road Suzhou 215123 Jiangsu P. R. China

5. Department of MaterialsImperial College London Exhibition Road London SW7 2AZ UK

Funder

Engineering and Physical Sciences Research Council

Isaac Newton Trust

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Priority Academic Program Development of Jiangsu Higher Education Institutions

Higher Education Discipline Innovation Project

Royal Academy of Engineering

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201909983

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