Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination-Reference-Cited by-同舟云学术

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Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination

Published:2016-03-21 Issue:17 Volume:26 Page:2882-2889
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Solmaz Alim¹,Huijben Mark¹,Koster Gertjan¹,Egoavil Ricardo²,Gauquelin Nicolas²,Van Tendeloo Gustaaf²,Verbeeck Jo²,Noheda Beatriz³,Rijnders Guus¹

Affiliation:

1. Faculty of Science and Technology; MESA+ Institute for Nanotechnology; University of Twente; 7500 AE Enschede The Netherlands

2. EMAT, University of Antwerp; Groenenborgerlaan 171 2020 Antwerp Belgium

3. Zernike Institute for Advanced Materials; University of Groningen; 9747 AG Groningen The Netherlands

Funder

Hercules fund

European Research Council

ERC

European Union Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments

2. Evidence for domain formation near the Curie temperature in ultrathin Ni/Cu (001) filmswith perpendicular anisotropy

3. Thermodynamic stability of thin ferroelectric films

4. Theory of the Structure of Ferromagnetic Domains in Films and Small Particles

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