Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating-Reference-Cited by-同舟云学术

Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating

Author:

Li Yang¹²,Xu Cheng-Yan¹²,Qin Jing-Kai²,Feng Wei²,Wang Jia-Ying²,Zhang Siqi³,Ma Lai-Peng⁴,Cao Jian¹,Hu Ping An⁵,Ren Wencai⁴,Zhen Liang²⁵

Affiliation:

1. State Key Laboratory of Advanced Welding and Joining; Harbin Institute of Technology; Harbin 150001 P. R. China

2. School of Materials Science and Engineering; Harbin Institute of Technology; Harbin 150001 P. R. China

3. Department of Physics; Harbin Institute of Technology; Harbin 150001 P. R. China

4. Shenyang National Laboratory for Materials Science; Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110016 P. R. China

5. Micro/Nano Technology Research Center; Harbin Institute of Technology; Harbin 150080 P. R. China

Funder

National Natural Science Foundation of China

State Key Laboratory of Advanced Welding and Joining

National Basic Research Program of China

Ministry of Science and Technology of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference54 articles.

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献