Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets-Reference-Cited by-同舟云学术

Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS 2 Nanosheets

Published:2018-12-11 Issue:4 Volume:29 Page:1804387
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Higgins Thomas M.¹,Finn Sean²,Matthiesen Maik¹,Grieger Sebastian¹,Synnatschke Kevin¹,Brohmann Maximilian¹,Rother Marcel¹,Backes Claudia¹^ORCID,Zaumseil Jana¹³^ORCID

Affiliation:

1. Institute for Physical Chemistry Universität Heidelberg D‐69120 Heidelberg Germany

2. School of Physics Trinity College Dublin Dublin 2 Ireland

3. Centre for Advanced Materials Universität Heidelberg D‐69120 Heidelberg Germany

Funder

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201804387

Reference60 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Recent Strategies for Improving the Catalytic Activity of 2D TMD Nanosheets Toward the Hydrogen Evolution Reaction

3. Synthesis of Two-Dimensional Materials for Capacitive Energy Storage

4. Ambipolar MoS2 Thin Flake Transistors

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