Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2Heterostructures-Reference-Cited by-同舟云学术

Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2Heterostructures

Published:2015-11-05 Issue:47 Volume:25 Page:7360-7365
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Li Dong¹,Wang Xiaojuan¹,Zhang Qichong¹,Zou Liping¹,Xu Xiangfan²,Zhang Zengxing¹²

Affiliation:

1. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and MOE Key Laboratory of Advanced Micro-Structured Materials and School of Physics Science and Engineering; Tongji University; Shanghai 200092 P.R. China

2. Center for Phononics and Thermal Energy Science; Tongji University; Shanghai 200092 P.R. China

Funder

NSFC

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201503645/fullpdf

Reference36 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Single-layer MoS2 transistors

4. Ultrasensitive photodetectors based on monolayer MoS2

5. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

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