Significantly Increased Raman Enhancement on MoX2 (X = S, Se) Monolayers upon Phase Transition-Reference-Cited by-同舟云学术

Significantly Increased Raman Enhancement on MoX2 (X = S, Se) Monolayers upon Phase Transition

Published:2017-03-17 Issue:16 Volume:27 Page:1606694
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yin Ying¹,Miao Peng²,Zhang Yumin¹,Han Jiecai¹,Zhang Xinghong¹,Gong Yue³,Gu Lin³,Xu Chengyan⁴,Yao Tai⁵,Xu Ping²,Wang Yi⁵,Song Bo⁵,Jin Song⁶

Affiliation:

1. Centre for Composite Materials and Structures; Harbin Institute of Technology; Harbin 150001 China

2. MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage; School of Chemistry and Chemical Engineering; Harbin Institute of Technology; Harbin 150001 China

3. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

4. School of Materials Science and Engineering; Harbin Institute of Technology; Harbin 150001 China

5. Academy of Fundamental and Interdisciplinary Sciences; Department of Physics; Harbin Institute of Technology; Harbin 150001 China

6. Department of Chemistry; University of Wisconsin-Madison; 1101 University Avenue Madison WI 53706 USA

Funder

Major State Basic Search Program

National Natural Science Foundation of China

Fundamental Research Funds for the Central University

International Science & Technology Cooperation Program of China

Program for New Century Excellent Talents in University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201606694/fullpdf

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