Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

Published:2010-07-13 Issue:17 Volume:20 Page:2911-2915
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Bertness Kris A.,Sanders Aric W.,Rourke Devin M.,Harvey Todd E.,Roshko Alexana,Schlager John B.,Sanford Norman A.

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201000381/fullpdf

Reference17 articles.

1. The Controlled Growth of GaN Nanowires

2. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

3. Faceted and Vertically Aligned GaN Nanorod Arrays Fabricated without Catalysts or Lithography

4. Deep level optical spectroscopy of GaN nanorods

5. Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Cited by 110 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective;Advanced Theory and Simulations;2024-08-08

2. Red Emission of Well‐Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective‐Area Growth;physica status solidi (b);2024-04-25

3. Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications;IEEE Transactions on Nanotechnology;2024

4. Numerical simulation and characterization of high-power gallium nitride based Junctionless Accumulation Mode Nanowire FET (GaN-JAM-NWFET) for small signal high frequency terahertz applications;AEU - International Journal of Electronics and Communications;2024-01

5. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3